PSMN025-100D NXP Semiconductors, PSMN025-100D Datasheet - Page 6
![SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415037/sot428_3d_sml.gif)
PSMN025-100D
Manufacturer Part Number
PSMN025-100D
Description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN025-100D.pdf
(14 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
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Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
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Part Number:
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NXP Semiconductors
6. Characteristics
Table 6.
PSMN025-100D
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain voltage
reverse recovery time
recovered charge
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
I
T
V
T
V
R
measured from tab to centre of die ;
T
measured from source lead to source
bond pad ; T
I
see
I
V
D
D
D
D
D
D
S
S
j
j
j
DS
DS
GS
GS
GS
GS
DS
DS
GS
G(ext)
= 25 °C; see
= 25 °C; see
= 25 °C
= 25 A; V
= 20 A; dI
Rev. 4 — 12 January 2012
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 45 A; V
Figure 9
Figure
Figure 9
Figure 11
Figure
Figure 15
= 100 V; V
= 100 V; V
= 10 V; V
= -10 V; V
= 10 V; I
= 10 V; I
= 25 V; V
= 50 V; R
= 0 V; V
= 5.6 Ω; T
9; see
11; see
DS
GS
S
N-channel TrenchMOS SiliconMAX standard level FET
DS
DS
DS
j
DS
D
D
/dt = -100 A/µs;
= 25 °C
DS
GS
L
DS
= 25 A; T
= 25 A; T
= 80 V; V
= 0 V; T
GS
GS
= V
= V
= V
Figure 13
Figure 14
= 1.8 Ω; V
GS
GS
= 25 V; T
= 0 V; T
= 0 V; f = 1 MHz;
j
= 0 V; T
Figure 10
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 12
; T
; T
; T
j
= 25 °C;
j
j
j
j
j
GS
j
j
= 175 °C;
= 25 °C;
= -55 °C;
= 175 °C;
= 25 °C;
j
= 25 °C
GS
= 25 °C
j
j
= 25 °C
j
j
= 25 °C
= 175 °C
= 10 V;
= -55 °C
= 25 °C
= 10 V;
PSMN025-100D
Min
89
100
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
0.05
-
0.02
0.02
-
22
61
13
25
2600
340
195
18
72
69
58
3.5
7.5
0.87
82
0.26
© NXP B.V. 2012. All rights reserved.
10
100
-
-
-
-
Max
-
-
-
4
6
500
100
68
25
-
-
-
-
-
-
-
-
-
1.2
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
ns
µC
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