PSMN050-80PS NXP Semiconductors, PSMN050-80PS Datasheet - Page 2

• Manufacturer Part Number: PSMN050-80PS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN050-80PS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN050-80PS
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base; connected to drain
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Conditions
T
T
V
V
pulsed; t
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
Rev. 2 — 28 November 2011
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 80 V; R
p
p
≤ 10 µs; T
≤ 10 µs; T
Simplified outline
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
= 100 °C; see
= 25 °C; see
SOT78 (TO-220AB)
= 50 Ω; unclamped
Figure 2
= 25 °C; I
mb
mb
N-channel 80 V 46 mΩ standard level MOSFET
= 25 °C; see
= 25 °C
1 2
GS
mb
D
= 20 kΩ
3
= 22 A;
Figure 1
Figure 1
Figure 3
PSMN050-80PS
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
175
175
Version
SOT78
Max
80
80
20
16
22
88
56
22
88
18
D
S
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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