PSMN050-80PS NXP Semiconductors, PSMN050-80PS Datasheet - Page 6

• Manufacturer Part Number: PSMN050-80PS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
[1]
PSMN050-80PS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
Measured 3 mm from package.
(A)
I
40
30
20
10
D
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
2
10
8
6
4
…continued
6
V
GS
(V) =
All information provided in this document is subject to legal disclaimers.
8
5.5
003aad046
V
DS
4.5
(V)
Conditions
I
T
see
I
V
5
S
S
Rev. 2 — 28 November 2011
j
GS
10
= 15 A; V
= 25 °C;
= 50 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = 100 A/µs;
= 0 V;
= 40 V
Fig 6.
R
(mΩ)
DSon
N-channel 80 V 46 mΩ standard level MOSFET
100
80
60
40
20
of drain current; typical values
Drain-source on-state resistance as a function
0
V
GS
10
(V) =
PSMN050-80PS
5
Min
-
-
-
20
Typ
0.86
32
28
30
5.5
© NXP B.V. 2011. All rights reserved.
003aad047
I
D
6
(A)
-
Max
1.2
-
8
10
20
40
Unit
V
ns
nC
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