SI2302DS NXP Semiconductors, SI2302DS Datasheet
SI2302DS
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SI2302DS Summary of contents
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... N-channel enhancement mode field-effect transistor Rev. 02 — 20 November 2001 M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: SI2302DS in SOT23. 2. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications ...
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... 4.5 V; Figure 2 and 4.5 V; Figure pulsed Figure Figure Rev. 02 — 20 November 2001 SI2302DS Typ Max Unit 20 V 2.5 A 0.83 W 150 115 m Min Max Unit 2.5 A ...
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... I der (%) 150 200 ------------------ - der I Fig 2. Normalized continuous drain current as a function of solder point temperature Rev. 02 — 20 November 2001 SI2302DS 03aa25 0 50 100 150 200 100 03ae92 µ 100 (V) © ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 09107 Product data N-channel enhancement mode field-effect transistor Conditions Rev. 02 — 20 November 2001 SI2302DS Value Unit Figure 4 150 K/W 03ae91 ...
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... 4 3 MHz; Figure Figure Rev. 02 — 20 November 2001 SI2302DS Min Typ Max Unit 20 V 0.65 V 0.01 1 100 115 Figure 13 5 ...
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... 2 1.6 1 0.8 4 --------------------------- - Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 02 — 20 November 2001 SI2302DS 03ae95 V DS > DSon 150 ºC 25 º ( DSon ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF) C iss oss C rss (V) Rev. 02 — 20 November 2001 SI2302DS 03ah78 min typ 0 0.4 0 03ae98 10 2 © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... º Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 02 — 20 November 2001 SI2302DS 03ae99 3 º (nC © Koninklijke Philips Electronics N.V. 2001. All rights reserved. ...
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... scale 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC EIAJ TO-236AB Rev. 02 — 20 November 2001 SI2302DS detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. SOT23 ...
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... Figure 9 • Figure 10 01 20010903 - Product specification; initial version. 9397 750 09107 Product data N-channel enhancement mode field-effect transistor Correction to V GS(th) Correction to curves. Correction to curves. Rev. 02 — 20 November 2001 SI2302DS conditions. © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... Rev. 02 — 20 November 2001 Rev. 02 — 20 November 2001 SI2302DS SI2302DS performance. Philips Semiconductors assumes Fax: + 24825 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 20 November 2001 Document order number: 9397 750 09107 N-channel enhancement mode field-effect transistor SI2302DS ...