SI2302DS NXP Semiconductors, SI2302DS Datasheet - Page 3

• Manufacturer Part Number: SI2302DS
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09107
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
sp
der
P der
(%)
function of solder point temperature.
= 25 C; I
120
80
40
=
0
----------------------
P
0
10 -1
10 -2
(A)
I D
10 2
10
tot 25 C
1
P
10 -1
tot
DM
is single pulse.
50
100%
100
R DSon = V DS / I D
150
T sp (
03aa17
o
C)
1
200
Rev. 02 — 20 November 2001
DC
N-channel enhancement mode field-effect transistor
Fig 2. Normalized continuous drain current as a
I
der
I der
(%)
120
function of solder point temperature.
80
40
=
0
------------------ -
I
0
D 25 C
10
I
D
50
100%
t p = 10 µs
1 ms
10 ms
100 ms
V DS (V)
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
100
150
SI2302DS
03ae92
T sp (
10 2
03aa25
o
C)
200
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