BLF404 NXP Semiconductors, BLF404 Datasheet - Page 11

Silicon N-channel enhancement mode vertical D-MOS power transistor in an 8-lead SOT409A SMD package with a ceramic cap

BLF404

Manufacturer Part Number
BLF404
Description
Silicon N-channel enhancement mode vertical D-MOS power transistor in an 8-lead SOT409A SMD package with a ceramic cap
Manufacturer
NXP Semiconductors
Datasheet

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MOUNTING RECOMMENDATIONS
Both the metallized ground plate and the device leads contribute to the heat flow. It is recommended that the transistor
be mounted on a grounded metallized area of the printed-circuit board. This area should be of maximum 0.8 mm
thickness and include at least 12 x 0.5 diameter through metallized holes filled with solder.
A thermal resistance R
on the printed-circuit board.
2003 Sep 26
handbook, full pagewidth
UHF power MOS transistor
Dimensions in mm.
th(mb-h)
of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
Fig.15 Reflow soldering footprint for SOT409A.
7.38
3.60
1.87 (2 )
11
4.60
1.00 (9 )
0.60 (4 )
MGK390
0.80 (2 )
1.00 (8 )
0.50 (12 )
Product specification
BLF404

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