BLF404 NXP Semiconductors, BLF404 Datasheet - Page 4

• Manufacturer Part Number: BLF404
• Description: Silicon N-channel enhancement mode vertical D-MOS power transistor in an 8-lead SOT409A SMD package with a ceramic cap
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Sep 26
V
V
I
I
I
R
g
C
C
C
SYMBOL
j
DSS
GSS
DSX
GS
GROUP
fs
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
UHF power MOS transistor
group indicator
G
M
A
B
C
D
E
H
K
N
F
L
J
drain-source breakdown voltage V
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
on-state drain current
drain-source on-state resistance I
forward transconductance
input capacitance
output capacitance
feedback capacitance
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
PARAMETER
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
I
V
V
V
I
V
V
V
D
D
D
GS
GS
GS
GS
GS
GS
GS
= 50 mA; V
= 0.7 A; V
= 0.7 A; V
= 0; I
= 0; V
= 20 V; V
= 15 V; V
= 0; V
= 0; V
= 0; V
D
CONDITIONS
DS
DS
DS
DS
= 5 mA
4
GS
DS
GROUP
= 12.5 V
= 12.5 V; f = 1 MHz
= 12.5 V; f = 1 MHz
= 12.5 V; f = 1 MHz
DS
DS
DS
= 10 V
= 15 V
W
O
Q
P
R
S
U
V
X
Y
T
Z
= 10 V
= 10 V
= 0
40
2
200
MIN.
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
2.3
1.8
270
14
17
3
TYP.
LIMITS
Product specification
(V)
4.5
0.5
1
2.7
MAX.
BLF404
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
V
mA
A
mS
pF
pF
pF
UNIT
A