BLF647 NXP Semiconductors, BLF647 Datasheet

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap

BLF647

Manufacturer Part Number
BLF647
Description
Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap
Manufacturer
NXP Semiconductors
Datasheet

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Product specification
Supersedes data of 2001 Aug 02
DATA SHEET
BLF647
UHF power LDMOS transistor
M3D392
DISCRETE SEMICONDUCTORS
2001 Nov 27

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BLF647 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 ...

Page 2

... PIN Top view Fig.1 Simplified outline (V) (W) (dB) 28 120 >14.5 28 120 (PEP) >14.5 CONDITIONS CAUTION 2 Product specification BLF647 DESCRIPTION drain 1 drain 2 gate 1 gate 2 source, connected to flange MBK777 (%) (dBc) >55 >40 26 MIN. MAX. UNIT ...

Page 3

... MHz GS DS MGW546 (V) 3 Product specification CONDITIONS VALUE 290 W 0.6 mb tot 0.2 MIN. TYP 140 160 BLF647 UNIT K/W K/W MAX. UNIT V 5 ...

Page 4

... Ruggedness in class-AB operation The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 100 MHz at rated load power. DS The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions. ...

Page 5

... P L (W) 5 Product specification 100 150 P L (PEP) ( 600 MHz ( 6 dB 600.1 MHz ( 6 dB Intermodulation distortion as a function of peak envelope output power; typical values. BLF647 MGW541 200 ...

Page 6

Acrobat reader. white to force landscape pages to be ... input bias Dimensions in mm. Fig.6 ...

Page 7

... Nov 27 DESCRIPTION 0.6 to 7.5 pF 100 8.2 pF 1.5 pF 100 470 F 100 100 3,3 7 Product specification VALUE DIMENSIONS 1 48.5 2 2.4 mm 1.5 lambda/2 1.5 48 2.2); thickness 0.79 mm. r BLF647 CATALOGUE No. 2222 595 16754 ...

Page 8

... Fig.7 Printed-circuit board and component layout for class-AB 600 MHz test circuit. 2001 Nov L15 C11 C6 C10 C12 L16 R3 8 Product specification C20 L14 R4 B2 C18 C13 C16 C14 C17 C15 C19 8 MGW547 BLF647 80 ...

Page 9

... P L (W) 9 Product specification 100 200 P L (PEP) ( 800 MHz ( 6 dB 800.1 MHz ( 6 dB Intermodulation distortion as a function of peak envelope output power; typical values. BLF647 MGW544 300 ...

Page 10

Acrobat reader. white to force landscape pages to be ... input bias C9 Dimensions in ...

Page 11

... Nov 27 DESCRIPTION 0.6 to 7.5 pF 100 8 4.7 pF 100 470 F 100 100 3,3 11 Product specification VALUE DIMENSIONS 1 48.5 2 2.4 mm 1.5 lambda/2 1.5 48 2.2); thickness 0.79 mm. r BLF647 CATALOGUE No. 2222 595 16754 ...

Page 12

... Fig.12 Printed-circuit board and component layout for class-AB 800 MHz test circuit. 2001 Nov L15 C11 C13 C6 C10 C12 L16 R3 12 Product specification C20 L14 R4 B2 C18 C16 C14 C17 C15 C19 8 MGW548 BLF647 80 ...

Page 13

... 18.72 3.38 2.72 34.16 9.91 27.94 18.47 3.12 2.46 33.91 9.65 0.737 0.133 0.107 1.345 0.390 1.100 0.727 0.123 0.097 1.335 0.380 EUROPEAN PROJECTION Product specification BLF647 SOT540A 0.25 0.51 0.25 0.010 0.020 0.010 ISSUE DATE 99-08-27 99-12-28 ...

Page 14

... Product specification BLF647 DEFINITIONS These products are not Philips Semiconductors ...

Page 15

... Philips Semiconductors UHF power LDMOS transistor 2001 Nov 27 NOTES 15 Product specification BLF647 ...

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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited ...

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