BLF647 NXP Semiconductors, BLF647 Datasheet - Page 9

• Manufacturer Part Number: BLF647
• Description: Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Application at 800 MHz
2001 Nov 27
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
T
2-tone: f
measured in 800 MHz test circuit.
Fig.8
T
measured in 800 MHz test circuit.
Fig.10 Power gain and drain efficiency as functions
h
h
(dB)
= 25 C; V
= 25 C; V
(dB)
G p
G p
20
15
10
20
15
10
5
0
5
0
0
0
1
= 800 MHz ( 6 dB); f
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
of load power; typical values.
DS
DS
= 32 V; I
= 32 V; I
G p
G p
50
100
DQ
DQ
D
D
= 1 A.
= 1 A; CW, class-AB; f = 800 MHz;
2
= 800.1 MHz ( 6 dB)
100
200
P L (PEP) (W)
150
P L (W)
MGW543
MGW545
300
200
80
60
40
20
0
80
60
40
20
0
(%)
(%)
D
D
9
handbook, halfpage
T
2-tone: f
measured in 800 MHz test circuit.
Fig.9
h
(dBc)
d im
= 25 C; V
20
40
60
80
0
0
1
= 800 MHz ( 6 dB); f
Intermodulation distortion as a function of
peak envelope output power; typical values.
DS
= 32 V; I
100
DQ
= 1 A.
2
= 800.1 MHz ( 6 dB)
200
Product specification
P L (PEP) (W)
d 3
d 5
MGW544
BLF647
300