BLF7G21L-160P NXP Semiconductors, BLF7G21L-160P Datasheet - Page 3

• Manufacturer Part Number: BLF7G21L-160P
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G21L-160P_7G21LS-160P
Product data sheet
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 PDPCH; f
RF performance at V
class-AB production test circuit.
Table 8.
Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 PDPCH; f
I
Symbol
R
Symbol Parameter
V
V
I
I
g
Symbol
G
RL

ACPR
ACPR
Symbol Parameter
PAR
I
R
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
th(j-c)
DS(on)
p
= 25
in
= 1080 mA; T
O
5M
10M

C; per section unless otherwise specified.
output peak-to-average ratio P
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Parameter
thermal resistance from junction to case
Thermal characteristics
Characteristics
Application information
Application information
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
adjacent channel power ratio (10 MHz)
BLF7G21L-160P; BLF7G21LS-160P
case
All information provided in this document is subject to legal disclaimers.
DS
= 25
1
1
= 1932.5 MHz; f
= 1932.5 MHz; f
= 28 V; I
Rev. 2 — 13 October 2011

C; unless otherwise specified; in a class-AB production test circuit.
Dq
= 1080 mA; T
2
2
Conditions
at 0.01 % probability on CCDF
= 1937.5 MHz; f
= 1987.5 MHz; RF performance at V
L(AV)
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 80 W;
= 3.15 A
case
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 25
GS(th)
GS(th)
Conditions
P
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
Conditions
T
3
D
case

DS
D
D
= 1982.5 MHz; f
C; unless otherwise specified; in a
= 0.9 mA
+ 3.75 V;
+ 3.75 V;
DS
= 45 W
= 45 W
= 45 W
= 45 W
= 45 W
= 90 mA
= 4.5 A
= 28 V
= 80 C; P
= 0 V
Power LDMOS transistor
L
Min Typ
-
31
-
17.0 18.0
= 100 W
Min Typ
65
1.5
-
14
-
-
-
4
Min Typ Max Unit
4.0
= 1987.5 MHz;
DS
© NXP B.V. 2011. All rights reserved.
15
34
30
-
-
1.9
-
-
-
7
0.15
= 28 V;
4.5
Max
-
8
-
25
-
Typ
0.41 K/W
Max Unit
-
2.3
2
-
200
-
-
-
3 of 15
Unit
V
V
A
A
nA
S

dB
Unit
dB
dB
%
dBc
dBc