BLF7G21L-160P NXP Semiconductors, BLF7G21L-160P Datasheet - Page 4

• Manufacturer Part Number: BLF7G21L-160P
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G21L-160P_7G21LS-160P
Product data sheet
7.1 Ruggedness in class-AB operation
7.2 CW
The BLF7G21L-160P and BLF7G21LS-160P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Fig 1.
(1) f = 1930 MHz
(2) f = 1960 MHz
(3) f = 1990 MHz
V
Power gain and drain efficiency as function of load power; typical values
DS
DS
= 28 V; I
BLF7G21L-160P; BLF7G21LS-160P
All information provided in this document is subject to legal disclaimers.
= 28 V; I
Dq
(dB)
= 1080 mA.
G
Rev. 2 — 13 October 2011
p
22
18
14
10
Dq
38
= 1080 mA; P
(1)
42
(2)
(3)
L
= 160 W (CW); f = 1805 MHz.
46
50
P
001aan460
L
(dBm)
54
Power LDMOS transistor
60
40
20
0
(%)
η
D
© NXP B.V. 2011. All rights reserved.
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