BLF7G21L-160P NXP Semiconductors, BLF7G21L-160P Datasheet - Page 6

• Manufacturer Part Number: BLF7G21L-160P
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G21L-160P_7G21LS-160P
Product data sheet
Fig 5.
(dB)
G
(1) f = 1930 MHz
(2) f = 1960 MHz
(3) f = 1990 MHz
p
22
18
14
10
24
V
Power gain and drain efficiency as function of
load power; typical values
DS
= 28 V; I
28
7.4 2-Carrier W-CDMA 5 MHz
32
Dq
= 1080 mA.
36
40
(1)
(2)
44
(3)
BLF7G21L-160P; BLF7G21LS-160P
P
All information provided in this document is subject to legal disclaimers.
L
001aan464
(dBm)
48
52
Rev. 2 — 13 October 2011
60
40
20
0
(%)
η
D
Fig 6.
ACPR
(dBc)
(1) f = 1930 MHz
(2) f = 1960 MHz
(3) f = 1990 MHz
−10
−30
−50
−70
5M
24
V
Adjacent channel power ratio (5 MHz) and
adjacent channel power ratio (10 MHz) as a
function of load power; typical values
DS
= 28 V; I
28
(1)
(2)
(3)
32
Dq
= 1080 mA.
36
Power LDMOS transistor
40
44
© NXP B.V. 2011. All rights reserved.
P
L
001aan465
(dBm)
48
(1)
(2)
(3)
52
ACPR
−10
−30
−50
−70
(dBc)
6 of 15
10M