BLF7G24LS-140 NXP Semiconductors, BLF7G24LS-140 Datasheet - Page 2

140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz

BLF7G24LS-140

Manufacturer Part Number
BLF7G24LS-140
Description
140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF7G24L-140_7G24LS-140
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
BLF7G24L-140 (SOT502A)
1
2
3
BLF7G24LS-140 (SOT502B)
1
2
3
Type number
Symbol
V
I
T
Symbol Parameter
R
BLF7G24L-140
BLF7G24LS-140
V
T
D
stg
j
DS
GS
th(j-c)
Connected to flange.
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
BLF7G24L-140; BLF7G24LS-140
Rev. 3 — 1 August 2011
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
[1]
Simplified outline
Conditions
T
case
= 80 C; P
1
2
1
2
3
Power LDMOS transistor
L
3
= 125 W
Graphic symbol
-
Min
-
0.5
-
65
© NXP B.V. 2011. All rights reserved.
2
2
Max
65
+13
28
+150
200
Typ
0.28
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 14
Unit
K/W
Unit
V
V
A
C
C

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