BLF7G24LS-140 NXP Semiconductors, BLF7G24LS-140 Datasheet - Page 5
BLF7G24LS-140
Manufacturer Part Number
BLF7G24LS-140
Description
140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G24L-140.pdf
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BLF7G24L-140_7G24LS-140
Product data sheet
Fig 5.
PAR
(dB)
(1) f = 2300 MHz
(2) f = 2400 MHz
12
8
4
0
0
V
Single carrier IS-95 peak-to-average power
ratio as a function of load power;
typical values
DS
= 28 V; I
20
Dq
= 1300 mA.
40
(1)
(2)
60
80
All information provided in this document is subject to legal disclaimers.
001aan527
P
L
(W)
BLF7G24L-140; BLF7G24LS-140
100
Rev. 3 — 1 August 2011
Fig 6.
P
(W)
L(M)
(1) f = 2300 MHz
(2) f = 2400 MHz
250
200
150
100
50
0
0
V
Single carrier IS-95 peak power as a function
of load power; typical values
DS
= 28 V; I
20
Dq
= 1300 mA.
40
(1)
(2)
Power LDMOS transistor
60
© NXP B.V. 2011. All rights reserved.
80
001aan528
P
L
(W)
100
5 of 14
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