BLF7G24LS-140 NXP Semiconductors, BLF7G24LS-140 Datasheet - Page 8
![140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz](/photos/41/53/415338/sot502b_3d_sml.gif)
BLF7G24LS-140
Manufacturer Part Number
BLF7G24LS-140
Description
140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G24L-140.pdf
(14 pages)
NXP Semiconductors
BLF7G24L-140_7G24LS-140
Product data sheet
Fig 13. Single carrier W-CDMA peak-to-average power
PAR
(dB)
(1) f = 2300 MHz
(2) f = 2400 MHz
8
6
4
2
0
V
ratio as a function of load power;
typical values
DS
= 28 V; I
Dq
40
= 1300 mA.
(1)
(2)
80
P
All information provided in this document is subject to legal disclaimers.
L
001aan535
(W)
BLF7G24L-140; BLF7G24LS-140
120
Rev. 3 — 1 August 2011
Fig 14. Single carrier W-CDMA peak output power as a
P
(W)
L(M)
(1) f = 2300 MHz
(2) f = 2400 MHz
300
250
200
150
100
50
0
V
function of load power; typical values
DS
= 28 V; I
Dq
40
= 1300 mA.
(1)
(2)
Power LDMOS transistor
80
© NXP B.V. 2011. All rights reserved.
P
L
001aan536
(W)
120
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