BLL6G1214L-250 NXP Semiconductors, BLL6G1214L-250 Datasheet

250 W LDMOS power transistor intended for L-band radar applications in the 1

BLL6G1214L-250

Manufacturer Part Number
BLL6G1214L-250
Description
250 W LDMOS power transistor intended for L-band radar applications in the 1
Manufacturer
NXP Semiconductors
Datasheet

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BLL6G1214L-250
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1.
Typical RF performance at T
production test circuit.
Test signal
pulsed RF
BLL6G1214L-250
LDMOS L-band radar power transistor
Rev. 1 — 16 February 2012
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 36 V, an I
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
Output power = 250 W
Power gain = 15 dB
Efficiency = 45 %
Test information
Dq
of 150 mA, a t
f
(GHz)
1.2 to 1.4
case
= 25
p
of 1 ms with  of 10 %:
C; t
V
(V)
36
DS
p
= 1 ms;
P
(W)
250
L
= 10 %; I
G
(dB)
15
p
Dq
= 150 mA; in a class-AB
Preliminary data sheet
(%)
45
D
t
(ns)
15
r
t
(ns)
5
f

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BLL6G1214L-250 Summary of contents

Page 1

... BLL6G1214L-250 LDMOS L-band radar power transistor Rev. 1 — 16 February 2012 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Typical RF performance at T production test circuit. Test signal pulsed RF 1.2 Features and benefits  ...

Page 2

... Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 February 2012 BLL6G1214L-250 LDMOS L-band radar power transistor Simplified outline Graphic symbol 1 3 [1] 2 Min - 0.5 -  ...

Page 3

... No RF applied output power frequency range  pulse duration  All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 February 2012 BLL6G1214L-250 LDMOS L-band radar power transistor Conditions = 85  250 W case  250 W ...

Page 4

... droop(pulse [1] The rise and fall time of the input circuit will maximum. 6.1 Ruggedness in class-AB operation The BLL6G1214L-250 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 150 mA Application information 7.1 Graphs ...

Page 5

... P ( C. Fig 4. aaa-002255 (1) (2) ( (W) i Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 February 2012 BLL6G1214L-250 LDMOS L-band radar power transistor (dB 1150 1250 1350 = 100 s;  250 W; t ...

Page 6

... P (W) i (1) T (2) T Fig 10. Power gain as a function of output power; All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 February 2012 BLL6G1214L-250 LDMOS L-band radar power transistor 1150 1250 1350 f (MHz ms;  250 Power gain, input return loss and drain efficiency as function of frequency ...

Page 7

... P (W) L (1) T (2) T Fig 14. Drain efficiency as a function of output power; All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 February 2012 BLL6G1214L-250 LDMOS L-band radar power transistor aaa-002262 100 s;  1300 MHz   ...

Page 8

... Printed-Circuit Board (PCB): Duroid 6010;  thickness copper plating = 35 m. See Table 9 for a list of components. All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 February 2012 BLL6G1214L-250 LDMOS L-band radar power transistor Z L  1.288  j1.014 1.139  j1.086 1.038  ...

Page 9

... SMD resistor All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 February 2012 BLL6G1214L-250 LDMOS L-band radar power transistor Value Remarks [ [2] 200 pF ...

Page 10

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 February 2012 BLL6G1214L-250 LDMOS L-band radar power transistor ...

Page 11

... ESD IR L-band LDMOS LDMOST RF SMD VSWR 11. Revision history Table 11. Revision history Document ID BLL6G1214L-250 v.1 BLL6G1214L-250 Preliminary data sheet Abbreviations Description Direct Current ElectroStatic Discharge InfraRed Long wave band Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Surface Mounted Device ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 February 2012 BLL6G1214L-250 LDMOS L-band radar power transistor © NXP B.V. 2012. All rights reserved ...

Page 13

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 16 February 2012 BLL6G1214L-250 LDMOS L-band radar power transistor © NXP B.V. 2012. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLL6G1214L-250 All rights reserved. Date of release: 16 February 2012 ...

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