BLL6G1214L-250 NXP Semiconductors, BLL6G1214L-250 Datasheet - Page 9

• Manufacturer Part Number: BLL6G1214L-250
• Description: 250 W LDMOS power transistor intended for L-band radar applications in the 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLL6G1214L-250
Preliminary data sheet
Table 9.
For test circuit see
[1]
[2]
[3]
Component
C1, C2, C3, C4, C7
C5, C8
C6, C9
C10
C11
R1
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 700A or capacitor of same quality.
List of components
All information provided in this document is subject to legal disclaimers.
Figure
Rev. 1 — 16 February 2012
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
16.
LDMOS L-band radar power transistor
BLL6G1214L-250
Value
56 pF
200 pF
1 nF
10 F; 20 V
22 F; 63 V
10 
© NXP B.V. 2012. All rights reserved.
[1]
[2]
[3]
Remarks
0603
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