BLS6G2735LS-30 NXP Semiconductors, BLS6G2735LS-30 Datasheet
BLS6G2735LS-30
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BLS6G2735LS-30 Summary of contents
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... BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 1 — 11 October 2011 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Typical RF performance at T Test signal Typical RF performance in a class-AB production test circuit in band 2.7 GHZ to 3.5 GHz pulsed RF Typical RF performance in an application test circuit in small band 2 ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLS6G2735L-30 (SOT1135A BLS6G2735LS-30 (SOT1135B [1] Connected to flange. 3. Ordering information Table 3. Type number BLS6G2735L-30 BLS6G2735LS-30 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLS6G2735L-30_6G2735LS-30 Objective data sheet BLS6G2735L-30 ...
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... G p Test information 7.1 Ruggedness in class-AB operation The BLS6G2735L-30 and BLS6G2735LS-30 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLS6G2735L-30_6G2735LS-30 Objective data sheet BLS6G2735L-30; BLS6G2735LS-30 Thermal characteristics Parameter transient thermal impedance from junction ...
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... NXP Semiconductors 7.2 Impedance information Table 8. Source and load impedances obtained in a wide-band test circuit. f GHz 2.7 2.9 3.1 3.3 3.5 Fig 1. BLS6G2735L-30_6G2735LS-30 Objective data sheet BLS6G2735L-30; BLS6G2735LS-30 Typical impedance Z S 3.4 j16.0 4.3 j13.0 5.4 j11.6 5.4 j12.0 3.7 j11.7 gate Z S Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 1 — ...
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... 2700 MHz ( 2900 MHz ( 3100 MHz ( 3300 MHz ( 3500 MHz Fig 2. Power gain and drain efficiency as function of output power; typical values BLS6G2735L-30_6G2735LS-30 Objective data sheet BLS6G2735L-30; BLS6G2735LS-30 aaa-001302 70 η D (%) 60 η ...
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... NXP Semiconductors ( 2700 MHz ( 2800 MHz ( 2900 MHz ( 3000 MHz ( 3100 MHz ( 3200 MHz ( 3300 MHz ( 3400 MHz ( 3500 MHz Fig 4. BLS6G2735L-30_6G2735LS-30 Objective data sheet BLS6G2735L-30; BLS6G2735LS- (dB) (1) (2) (3) ( ...
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... 2700 MHz ( 2900 MHz ( 3100 MHz ( 3300 MHz ( 3500 MHz Fig 5. Power gain and drain efficiency as function of output power; typical values BLS6G2735L-30_6G2735LS-30 Objective data sheet BLS6G2735L-30; BLS6G2735LS-30 aaa-001305 70 η D (%) 60 η ...
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... NXP Semiconductors ( 2700 MHz ( 2800 MHz ( 2900 MHz ( 3000 MHz ( 3100 MHz ( 3200 MHz ( 3300 MHz ( 3400 MHz ( 3500 MHz Fig 7. BLS6G2735L-30_6G2735LS-30 Objective data sheet BLS6G2735L-30; BLS6G2735LS- (dB) (1) (2) (3) ( ...
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... C4 [1] TDK or capacitor of same quality. [2] American Technical Ceramics type 800A or capacitor of same quality. BLS6G2735L-30_6G2735LS-30 Objective data sheet BLS6G2735L-30; BLS6G2735LS- Printed-Circuit Board (PCB): Rogers 3006; thickness copper plating = 35 m. See Table 9 for a list of components. Component layout for RF test circuit ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1135A Fig 9. Package outline SOT1135A BLS6G2735L-30_6G2735LS-30 Objective data sheet BLS6G2735L-30; BLS6G2735LS- ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1135B Fig 10. Package outline SOT1135B BLS6G2735L-30_6G2735LS-30 Objective data sheet BLS6G2735L-30; BLS6G2735LS- ...
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... LDMOS RF S-band VSWR 11. Revision history Table 11. Revision history Document ID BLS6G2735L-30_6G2735LS-30 v.1 BLS6G2735L-30_6G2735LS-30 Objective data sheet BLS6G2735L-30; BLS6G2735LS-30 Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Radio Frequency Short wave Band Voltage Standing-Wave Ratio Release date Data sheet status 20111011 Objective data sheet All information provided in this document is subject to legal disclaimers. ...
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... BLS6G2735L-30_6G2735LS-30 Objective data sheet BLS6G2735L-30; BLS6G2735LS-30 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLS6G2735L-30_6G2735LS-30 Objective data sheet BLS6G2735L-30; BLS6G2735LS-30 NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Trademarks Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 BLS6G2735L-30; BLS6G2735LS-30 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com S-band LDMOS transistor All rights reserved ...