BLS6G2735LS-30 NXP Semiconductors, BLS6G2735LS-30 Datasheet - Page 7

• Manufacturer Part Number: BLS6G2735LS-30
• Description: 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLS6G2735L-30_6G2735LS-30
Objective data sheet
Fig 5.
(dB)
G
(1) f = 2700 MHz
(2) f = 2900 MHz
(3) f = 3100 MHz
(4) f = 3300 MHz
(5) f = 3500 MHz
p
35
30
25
20
15
10
5
0
0
V
Power gain and drain efficiency as function of
output power; typical values
DS
= 32 V; I
10
(5)
(5)
(4)
(4)
Dq
= 50 mA; t
(3)
(3)
20
(2)
(2)
(1)
(1)
p
30
= 100 s;  = 20 %
BLS6G2735L-30; BLS6G2735LS-30
40
All information provided in this document is subject to legal disclaimers.
aaa-001305
P
L
(W)
η
G
D
p
Rev. 1 — 11 October 2011
50
70
60
50
40
30
20
10
0
(%)
η
D
Fig 6.
(W)
P
(1) f = 2700 MHz
(2) f = 2800 MHz
(3) f = 2900 MHz
(4) f = 3000 MHz
(5) f = 3100 MHz
(6) f = 3200 MHz
(7) f = 3300 MHz
(8) f = 3400 MHz
(9) f = 3500 MHz
L
50
40
30
20
10
0
0
V
Output power as a function of input power;
typical values
DS
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
= 32 V; I
1
Dq
= 50 mA; t
2
S-band LDMOS transistor
p
= 100 s;  = 20 %
3
© NXP B.V. 2011. All rights reserved.
aaa-001306
P
i
(W)
4
7 of 15