MX0912B251Y NXP Semiconductors, MX0912B251Y Datasheet - Page 4

• Manufacturer Part Number: MX0912B251Y
• Description: NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
T
Notes
1. See “ Mounting recommendations in the General part of handbook SC19a” .
2. Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
T
APPLICATION INFORMATION
Microwave performance up to T
mode in pulse; note 1.
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. V
1997 Feb 19
R
R
Z
I
I
I
Class C;
t
t
see Fig.5
SYMBOL
SYMBOL
j
mb
CBO
CES
EBO
p
p
th j-h
= 125 C unless otherwise specified.
th j-mb
th mb-h
NPN microwave power transistor
MODE OF OPERATION
= 10 s;
= 300 s;
= 25 C unless otherwise specified.
CC
during pulse.
thermal resistance from junction to mounting base CW
thermal resistance from mounting base to heatsink CW; note 1
thermal impedance from junction to heatsink
collector cut-off current
collector cut-off current
emitter cut-off current
= 10%
= 10%;
PARAMETER
PARAMETER
mb
0.960 to 1.215
1.03 to 1.09
= 25 C measured in the test jig as shown in Fig.6 and working in class C broadband
(GHz)
f
(V)
V
50
50
CC
(2)
4
typ. 275
typ. 280
>235
t
notes 1 and 2
V
V
V
V
(W)
p
P
CB
CB
CE
EB
= 10 s; = 10%
L
CONDITIONS
CONDITIONS
= 1.5 V; I
= 65 V; I
= 50 V; I
= 60 V; R
typ. 7.4
typ. 8
(dB)
E
E
G
C
BE
>7
= 0
= 0
po
= 0
= 0
100
10
100
1
typ. 47
typ. 48
>42
(%)
MAX.
MAX.
C
0.28
MX0912B251Y
1.9
0.2
Product specification
see Figs 7 and 8
mA
mA
mA
mA
Z
( )
i
UNIT
UNIT
/Z
K/W
K/W
K/W
L