MX0912B251Y NXP Semiconductors, MX0912B251Y Datasheet - Page 5

• Manufacturer Part Number: MX0912B251Y
• Description: NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1997 Feb 19
handbook, halfpage
NPN microwave power transistor
V
Fig.3
CC
(W)
P L
300
250
200
= 50 V; t
0.95
Load power as a function of frequency.
(In broadband test circuit as shown in Fig.6)
p
= 10 s;
1.05
= 10%.
1.15
f (GHz)
MGL042
1.25
5
handbook, halfpage
V
Fig.4
CC
(%)
C
= 50 V; t
50
45
40
0.95
Collector efficiency as a function of
frequency. (In broadband test circuit as
shown in Fig.6)
p
= 10 s;
1.05
= 10%.
MX0912B251Y
1.15
Product specification
f (GHz)
MGL043
1.25