STPS61L60C STMicroelectronics, STPS61L60C Datasheet - Page 2

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STPS61L60C

Manufacturer Part Number
STPS61L60C
Description
Power Schottky Rectifier
Manufacturer
STMicroelectronics
Datasheet

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Characteristics
1
Table 2.
1. Refer to
2.
Table 3.
When the diodes 1 and 2 are used simultaneously :
Δ
2/9
Symbol
V
V
Symbol
I
Tj(diode 1) = P(diode1) x R
R
V
F(RMS)
ARM
I
P
ASM
R
I
F(AV)
T
FSM
th(j-c)
ARM
RRM
th(c)
T
dPtot
stg
dTj
j
(1)
(1)
<
Repetitive peak reverse voltage
Forward rms voltage
Average forward current δ = 0.5
Surge non repetitive forward current t
Repetitive peak avalanche power
Maximum repetitive peak avalanche
voltage
Maximum single pulse peak
avalanche voltage
Storage temperature range
Maximum operating junction temperature
Junction to case
Coupling
Figure 12
Rth(j-a)
1
Characteristics
Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)
Thermal resistances
condition to avoid thermal runaway for a diode on its own heatsink
th(j-c)
(Per diode) + P(diode 2) x R
Parameter
Parameter
Doc ID 15641 Rev 2
T
T
t
t
t
p
p
p
p
c
c
= 10 ms sinusoidal
= 1 µs Tj = 25 °C
< 1 µs T
< 1 µs T
= 125 °C
= 120 °C
(2)
j
j
< 150 °C, I
< 150 °C, I
TO-247
TO-220AB
th(c)
Per diode
Per device
T0-247
T0-220AB
AR
AR
.
< 43 A
< 43 A
Per diode
Total
Per diode
Total
TO-247
TO-220AB
-65 to + 175
11500
Value
Value
0.95
0.25
530
400
150
0.6
1.1
0.7
0.3
60
50
30
60
80
80
STPS61L60C
°C/W
Unit
Unit
°C
°C
W
V
A
A
A
V
V

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