STPS61L60C STMicroelectronics, STPS61L60C Datasheet - Page 4

• Manufacturer Part Number: STPS61L60C
• Description: Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Characteristics
4/9
Figure 6.
Figure 8.
Figure 10. Junction capacitance vs. reverse
350
300
250
200
150
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10000
50
1000
1.E-03
1.E-03
0
100
Z
I (A)
M
Single pulse
th(j-c)
1
C(pF)
I
M
/R
th(j-c)
δ
Non repetitive surge peak forward
current vs. overload duration
(max. values, per diode, TO-247)
Relative variation of thermal
impedance junction to case
vs. pulse duration
voltage applied
(typical values, per diode)
=0.5
t
1.E-02
1.E-02
t (s)
p
t(s)
V (V)
R
10
1.E-01
1.E-01
V
osc
F=1 MHz
T
T
=30 mV
T
j
c
T
=25 °C
=125 °C
c
c
=75 °C
=25 °C
Doc ID 15641 Rev 2
1.E+00
1.E+00
RMS
100
Figure 7.
Figure 9.
Figure 11. Forward voltage drop vs. forward
1.E+03
1.E+02
1.E+01
1.E+00
350
300
250
200
150
100
100
1.E-01
1.E-02
50
10
1.E-03
0
1
0.0
I
I (A)
FM
M
0
I (mA)
I
R
0.1
M
(A)
Typical values
Typical values
T
T
J
J
=125 °C
=125 °C
5
0.2
δ
Non repetitive surge peak forward
current vs. overload duration
(max. values, per diode, TO-220AB)
Reverse leakage current vs. reverse
voltage applied
(typical values, per diode)
current (per diode)
=0.5
t
10
0.3
Maximum values
Maximum values
15
T
T
1.E-02
J
J
0.4
=125 °C
=125 °C
20
0.5
25
0.6
T
T
T
j
t(s)
=150 °C
T
T
T
V (V)
j
=125 °C
j
=100 °C
j
j
j
=75 °C
=50 °C
=25 °C
R
30
0.7
Maximum values
T
J
35
=25 °C
0.8
1.E-01
40
0.9
45
1.0
STPS61L60C
V
FM
1.1
50
T
T
c
T
=125 °C
c
(V)
c
=75 °C
=25 °C
1.2
55
1.E+00
1.3
60