STPS61L60C STMicroelectronics, STPS61L60C Datasheet - Page 3

• Manufacturer Part Number: STPS61L60C
• Description: Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STPS61L60C
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation: P = 0.44 x I
Figure 2.
Figure 4.
Symbol
0.001
V
I
0.01
30
25
20
15
10
R
0.1
F
5
0
(1)
0.01
1
(2)
0
P
P
F(av)
P
ARM
ARM p
(W)
Reverse leakage current
Forward voltage drop
(1µs)
5
(t )
p
p
Static electrical characteristics (per diode)
0.1
Average forward power dissipation
vs. average forward current
(per diode)
Normalized avalanche power
derating vs. pulse duration
= 5 ms, δ < 2%
= 380 µs, δ < 2%
δ =0.05
10
15
δ =0.1
Parameter
1
t (µs)
p
I
F(av)
20
δ =0.2
(A)
10
25
30
δ =0.5
δ
100
=tp/T
35
T
Doc ID 15641 Rev 2
T
T
T
T
T
T
T
T
tp
j
j
j
j
j
j
j
j
δ =1
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
1000
40
Test conditions
Figure 3.
Figure 5.
1.2
0.8
0.6
0.4
0.2
35
30
25
20
15
10
5
0
1
0
0
V
I
I
I
I
I
I
I
P
F
F
F
F
F
F
25
F(av)
R
ARM
P
= 5 A
= 5 A
= 15 A
= 15 A
= 30 A
= 30 A
ARM
δ
= V
=tp/T
(A)
(25 °C)
(T )
RRM
25
T
j
Average forward current vs.
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating vs. junction temperature
50
tp
50
Min.
R
th(j-a)
F(AV)
R
-
-
-
-
-
-
-
-
th(j-a)
75
=R
T amb (°C)
th(j-c)
=15 °C/W
T (°C)
75
j
+ 0.006 x I
0.360
0.255
0.460
0.415
0.580
0.560
Typ.
150
-
100
100
TO-220AB
Characteristics
0.540
0.480
0.660
0.620
Max.
F
350
0.8
2
125
-
-
(RMS)
125
TO-247
Unit
mA
150
150
V
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