STTH2002 STMicroelectronics, STTH2002 Datasheet - Page 2

• Manufacturer Part Number: STTH2002
• Description: Ultrafast recovery diode
• Manufacturer: STMicroelectronics

Specifications of STTH2002

• Insulating Voltage: 2500 V rms
• Capacitance: 7 pF

1
Table 2.
Table 3.
Table 4.
1. Pulse test: t
2. Pulse test: t
2/10
Symbol
Symbol
Symbol
I
R
V
F(RMS)
I
V
I
I
F(AV)
T
FSM
th(j-c)
R
RRM
T
F
stg
(1)
(2)
j
Repetitive peak reverse voltage
Forward rms current
Average forward current, δ = 0.5
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Junction to case
Reverse leakage current
Forward voltage drop
p
p
Characteristics
Absolute ratings (limiting values at T
Thermal parameters
Static electrical characteristics
To evaluate the conduction losses use the following equation:
P = 0.75 x I
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
Parameter
F(AV)
+ 0.01 I
F
2
(RMS)
Parameter
Parameter
Doc ID 12365 Rev 2
T
T
T
T
T
T
T
j
j
j
j
j
j
j
TO-220AC, D
TO-220ACins
= 25 °C
= 125 °C
= 25 °C
= 150 °C
= 25 °C
= 125 °C
= 150 °C
TO-220AC, D
TO-220ACins
t
p
Test conditions
= 10 ms sinusoidal
j
= 25 °C, unless otherwise specified)
V
I
I
F
F
2
R
PAK
= 20 A
= 25 A
2
= V
PAK
RRM
T
T
Min.
c
c
= 120 °C
= 60 °C
Typ.
0.86
0.94
0.9
10
1
-65 to + 175
Value
Value
200
175
175
2.4
35
20
5
Max.
0.95
1.15
1.05
100
1.1
10
1
°C/W
Unit
Unit
Unit
µA
°C
°C
V
A
A
A
V