STTH2002 STMicroelectronics, STTH2002 Datasheet - Page 4

• Manufacturer Part Number: STTH2002
• Description: Ultrafast recovery diode
• Manufacturer: STMicroelectronics

Specifications of STTH2002

• Insulating Voltage: 2500 V rms
• Capacitance: 7 pF

4/10
Figure 5.
Figure 7.
Figure 9.
1000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
100
0
10
10
25
1
V
I
R
F
= 160 V
=20 A
reverse applied voltage
(typical values)
dI
junction temperature
Junction capacitance versus
Reverse recovery time versus
Dynamic parameters versus
50
F
/dt (typical values)
I
RM
10
Q
RR
75
V
100
R
dI
(V)
T
F
/dt(A/µs)
j
T
(°C)
T
j
j
= 25 °C
= 125 °C
100
100
125
V
osc
F=1MHz
V
T
=30mV
I
j
R
=25°C
F
=20A
=160V
RMS
Doc ID 12365 Rev 2
1000
1000
150
Figure 6.
Figure 8.
Figure 10. Thermal resistance, junction to
80
70
60
50
40
30
20
10
400
350
300
250
200
150
100
20
18
16
14
12
10
0
50
8
6
4
2
0
0
10
0
10
V
I
R
F
V
= 160 V
= 20 A
I
R
F
= 20 A
= 160 V
5
Reverse recovery charges versus
dI
Peak reverse recovery current
versus dI
ambient, versus copper surface
under tab for D
F
Epoxy printed circuit board FR4,
copper thickness = 35 µm
/dt (typical values)
10
15
F
/dt (typical values)
S
CU
100
(cm²)
100
20
T
j
=125 °C
2
T
PAK
j
T
=125 °C
25
j
=25 °C
30
dI
dI
F
/dt(A/µs)
F
/dt(A/µs)
T
j
=25 °C
35
D²PAK
1000
1000
40