STTH2002 STMicroelectronics, STTH2002 Datasheet - Page 3

• Manufacturer Part Number: STTH2002
• Description: Ultrafast recovery diode
• Manufacturer: STMicroelectronics

Specifications of STTH2002

• Insulating Voltage: 2500 V rms
• Capacitance: 7 pF

Table 5.
Figure 1.
Figure 3.
Symbol
V
I
RM
t
t
FP
rr
fr
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
0
0
0.0
0.0
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
0.1
Dynamic characteristics
Forward voltage drop versus
forward current (maximum values)
Peak current versus duty cycle
δ
0.2
0.5
P = 10 W
P = 10 W
Parameter
0.3
P = 5 W
P = 5 W
0.4
1.0
T
j
=150°C
0.5
P = 3 W
P = 3 W
T
V
j
0.6
=25°C
1.5
FM
(V)
0.7
I
V
I
V
I
V
I
V
I
V
F
F
F
F
F
R
R
R
FR
FR
I
I
M
M
δ
d
= 1 A, dI
= 1 A, dI
= 20 A, dI
= 20 A, dI
= 20 A, dI
=tp/T
=tp/T
0.8
2.0
= 30 V, T
= 30 V, T
= 160 V, T
= 1.1 x V
= 1.1 x V
T
T
0.9
tp
tp
Doc ID 12365 Rev 2
Test conditions
F
F
2.5
1.0
/dt = -200 A/µs,
/dt = -50 A/µs,
F
F
F
j
j
/dt = 100 A/µs,
/dt = 100 A/µs
/dt = 100 A/µs,
= 25 °C
= 25 °C
Fmax
Fmax
j
= 125 °C
, T
, T
Figure 2.
Figure 4.
j
j
= 25 °C
= 25 °C
200
180
160
140
120
100
1.0
0.1
80
60
40
20
1.E-03
0
0.0
TO-220ACins
Single pulse
TO-220AC
D²PAK
Forward voltage drop versus
forward current (typical values)
Relative variation of thermal
impedance, junction to case,
versus pulse duration
0.5
1.E-02
Min.
T
j
=150°C
1.0
tp(s)
V
FM
(V)
Typ.
T
230
j
=25°C
16
33
8
2
1.5
1.E-01
Max.
2.0
20
40
10
1.E+00
2.5
Unit
ns
ns
A
V
3/10