STM8TL53G4 STMicroelectronics, STM8TL53G4 Datasheet - Page 53

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STM8TL53G4

Manufacturer Part Number
STM8TL53G4
Description
8-bit, ultra-low-power, touch-sensing MCUs with 16-Kbyte Flash and proximity detection
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8TL53G4

Operating Power Supply
1.65 V to 3.6 V
Temperature Range
–40 °C to 85 °C
4 Low Power Modes
Wait, Active-halt with AWU (1 μA), Active-halt with ProxSense™ (10 μA with scan every 200 ms),Halt (0.4 μA)
Dynamic Power Consumption
150 μA/MHz
Fast Wakeup From Halt Mode
4.7 μs
Ultralow Leakage Per I/o
50 nA

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0
STM8TL53xx
9.4
Static latch-up
Table 36.
Thermal characteristics
The maximum chip junction temperature (T
Table 14: General operating conditions on page
The maximum chip-junction temperature, T
using the following equation:
T
Where:
Table 37.
1. Thermal resistances are based on JEDEC JESD51-2 with 4-layer PCB in a natural convection
Jmax
environment.
Symbol
LU: 3 complementary static tests are required on 6 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to application note AN1181.
T
Θ
P
P
internal power.
P
where:
P
taking into account the actual V
the application.
Amax
Θ
= T
Dmax
INTmax
I/Omax
I/Omax
JA
Symbol
JA
is the package junction-to-ambient thermal resistance in °C/W
LU
Amax
is the maximum ambient temperature in °C
is the sum of P
= Σ (V
represents the maximum power dissipation on output pins
Electrical sensitivities
Thermal characteristics
is the product of I
+ (P
OL
Dmax
*I
OL
Thermal resistance junction-ambient
Thermal resistance junction-ambient
x Θ
) + Σ((V
INTmax
JA
UFQFPN 48 - 7 x 7 mm
UFQFPN 28 - 4 x 4 mm
Doc ID 022344 Rev 1
)
DD
DD
Static latch-up class
and P
and V
Parameter
OL
V
Parameter
OH)
(1)
/I
I/Omax
DD
OL and
*I
, expressed in watts. This is the maximum chip
OH
Jmax
Jmax
),
(P
V
) must never exceed the values given in
, in degrees Celsius, may be calculated
OH
37.
Dmax
/I
OH
= P
of the I/Os at low and high level in
INTmax
+ P
I/Omax
Electrical parameters
Value
32
80
)
Class
II
°C/W
°C/W
Unit
53/62

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