STW47NM60ND STMicroelectronics, STW47NM60ND Datasheet - Page 3

• Manufacturer Part Number: STW47NM60ND
• Description: N-channel 600 V, 0.075 Ohm, 35 A, TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
• Manufacturer: STMicroelectronics

STW47NM60ND
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
Table 4.
Rthj-case
Rthj-amb
Symbol
dv/dt
Symbol
Symbol
I
SD
DM
P
V
V
T
E
I
I
TOT
I
T
GS
T
DS
stg
D
D
AS
AS
j
≤ 35 A, di/dt ≤ 600 A/µs, V
l
(1)
(2)
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting T
J
=25 °C, I
DD
Parameter
Parameter
Doc ID 18281 Rev 2
= 80% V
Parameter
C
D
=I
= 25 °C
GS
AS
, V
= 0)
(BR)DSS
DD
C
C
=50 V)
= 25 °C
= 100 °C
–55 to 150
Value
Value
Value
± 25
1000
0.49
600
140
255
150
300
35
22
40
50
14
Electrical ratings
°C/W
°C/W
Unit
Unit
V/ns
Unit
°C
mJ
°C
°C
W
V
V
A
A
A
A
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