STW47NM60ND STMicroelectronics, STW47NM60ND Datasheet - Page 5

• Manufacturer Part Number: STW47NM60ND
• Description: N-channel 600 V, 0.075 Ohm, 35 A, TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
• Manufacturer: STMicroelectronics

STW47NM60ND
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
I
I
t
t
SD
RRM
RRM
I
d(on)
d(off)
Q
Q
SD
t
t
t
t
rr
rr
rr
rr
r
f
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Switching times
Source drain diode
Parameter
Parameter
Doc ID 18281 Rev 2
I
I
V
(see Figure 16)
I
V
(see Figure 16)
V
R
(see Figure 14)
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω V
= 35 A, V
= 35 A, di/dt = 100 A/µs
= 35 A, di/dt = 100 A/µs
= 100 V
= 100 V, T
= 300 V, I
Test conditions
Test conditions
GS
GS
D
j
= 150 °C
= 17.5 A
= 10 V
= 0
Electrical characteristics
Min.
Min
-
-
-
-
-
Typ.
Typ. Max. Unit
190
280
1.6
3.0
120
17
22
30
40
50
Max
140
1.3
35
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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