STW47NM60ND STMicroelectronics, STW47NM60ND Datasheet - Page 4

• Manufacturer Part Number: STW47NM60ND
• Description: N-channel 600 V, 0.075 Ohm, 35 A, TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
g
I
I
increases from 0 to 80% V
DS(on)
C
GS(th)
C
C
Q
Q
DSS
GSS
fs
Q
R
oss eq.
oss
rss
iss
gs
gd
g
(1)
g
= 25 °C unless otherwise specified).
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DS
GS
= 0)
Doc ID 18281 Rev 2
I
V
V
V
V
V
V
V
V
V
V
V
(see Figure 15)
f=1 MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
D
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
= 1 mA, V
=15 V
= Max rating
= Max rating, @125 °C
= ± 20 V
= V
= 10 V, I
= 50 V, f = 1 MHz,
= 0
= 0, V
= 480 V, I
= 10 V,
Test conditions
Test conditions
GS
,
, I
DS
I
D
GS
D
D
= 17.5 A
= 0 to 480 V
= 250 µA
D
= 17.5 A
= 0
= 35 A,
Min. Typ.
600
Min.
3
-
-
-
-
-
0.075 0.088
4300
Typ.
250
530
145
1.7
4
STW47NM60ND
17
25
18
80
oss
when V
Max. Unit
100
100
Max. Unit
10
5
-
-
-
-
-
DS
µA
µA
nA
nC
nC
nC
V
V
pF
pF
pF
pF
Ω
S
Ω