74AUP1G17GW,125 NXP Semiconductors, 74AUP1G17GW,125 Datasheet
74AUP1G17GW,125
Specifications of 74AUP1G17GW,125
935279024125
Related parts for 74AUP1G17GW,125
74AUP1G17GW,125 Summary of contents
Page 1
Low-power Schmitt trigger Rev. 4 — 15 July 2010 1. General description The 74AUP1G17 provides the single Schmitt-trigger buffer capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. This device ensures a very ...
Page 2
... NXP Semiconductors 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name 40 C to +125 C 74AUP1G17GW 40 C to +125 C 74AUP1G17GM 40 C to +125 C 74AUP1G17GF 40 C to +125 C 74AUP1G17GN 40 C to +125 C 74AUP1G17GS 4. Marking Table 2. Marking ...
Page 3
... NXP Semiconductors 6. Pinning information 6.1 Pinning 74AUP1G17 n. GND 001aaf170 Fig 4. Pin configuration SOT353-1 6.2 Pin description Table 3. Pin description Symbol Pin TSSOP5 n. GND n. Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level. 74AUP1G17 Product data sheet 74AUP1G17 n.c. ...
Page 4
... NXP Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current IK V input voltage I I output clamping current OK V output voltage O I output current ...
Page 5
... NXP Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter = 25 C T amb V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I power-off leakage current OFF I additional power-off leakage OFF ...
Page 6
... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V LOW-level output voltage OL I input leakage current I I power-off leakage current OFF I additional power-off leakage OFF current I supply current CC I additional supply current CC = 40 C to +125 C ...
Page 7
... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I additional power-off leakage OFF current I supply current CC I additional supply current CC 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see ...
Page 8
... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay see pF and power dissipation MHz capacitance [1] All typical values are measured at nominal V [ the same as t and t pd PLH PHL [ used to determine the dynamic power dissipation (P PD ...
Page 9
... NXP Semiconductors 12. Waveforms Measurement points are given in Logic levels: V and Fig 7. The data input (A) to output (Y) propagation delays Table 9. Measurement points Supply voltage Output 0.5 3.6 V Test data is given in Table Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance. ...
Page 10
... NXP Semiconductors 13. Transfer characteristics Table 11. Transfer characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter = 25 C T amb V positive-going T+ threshold voltage V negative-going T threshold voltage V hysteresis voltage H = 40 C to +85 C T amb V positive-going T+ threshold voltage V negative-going T threshold voltage 74AUP1G17 Product data sheet ...
Page 11
... NXP Semiconductors Table 11. Transfer characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter V hysteresis voltage H = 40 C to +125 C T amb V positive-going T+ threshold voltage V negative-going T threshold voltage V hysteresis voltage H 74AUP1G17 Product data sheet …continued Conditions see Figure 9, Figure 10, Figure 11 and Figure ...
Page 12
... NXP Semiconductors 14. Waveforms transfer characteristics T− Fig 9. Transfer characteristic Fig 11. Typical transfer characteristics; V 74AUP1G17 Product data sheet mnb154 Fig 10. Definition of V 240 I CC (μA) 160 0.4 0.8 1 All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 July 2010 74AUP1G17 ...
Page 13
... NXP Semiconductors Fig 12. Typical transfer characteristics; V 15. Application information The slow input rise and fall times cause additional power dissipation, this can be calculated using the following formula additional power dissipation (W input frequency (MHz input rise time (ns input fall time (ns CC(AV) ...
Page 14
... NXP Semiconductors (1) Positive-going edge. (2) Negative-going edge. Linear change of V between 0.8 V and 2.0 V. All values given are typical, unless otherwise specified. I Fig 13. Average function 74AUP1G17 Product data sheet 0.3 ΔI CC(AV) (mA) 0.2 0.1 0 0.8 1.8 2.8 CC All information provided in this document is subject to legal disclaimers. ...
Page 15
... NXP Semiconductors 16. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. 0.1 1.0 mm 1.1 0.15 0 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION IEC SOT353-1 Fig 14 ...
Page 16
... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. 6× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 1.5 mm 0.5 0.04 0.17 1.4 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...
Page 17
... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 6× (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 16 ...
Page 18
... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 0.95 mm nom 0.15 0.90 min 0.12 0.85 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...
Page 19
... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.05 mm nom 0.15 1.00 min 0.12 0.95 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...
Page 20
... NXP Semiconductors 17. Abbreviations Table 12. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 18. Revision history Table 13. Revision history Document ID Release date 74AUP1G17 v.4 20100715 • Modifications: Added type number 74AUP1G17GN (SOT1115/XSON6 package). ...
Page 21
... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
Page 22
... NXP Semiconductors Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 20. Contact information For more information, please visit: For sales office addresses, please send an email to: 74AUP1G17 Product data sheet 19 ...
Page 23
... NXP Semiconductors 21. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 3 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13 Transfer characteristics ...