IXTH4N150 IXYS, IXTH4N150 Datasheet

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IXTH4N150

Manufacturer Part Number
IXTH4N150
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTH4N150

Vdss, Max, (v)
1500
Id(cont), Tc=25°c, (a)
4
Rds(on), Max, Tj=25°c, (?)
6
Ciss, Typ, (pf)
1576
Qg, Typ, (nc)
44.5
Trr, Typ, (ns)
900
Pd, (w)
280
Rthjc, Max, (k/w)
0.45
Package Style
TO-247

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTH4N150
Manufacturer:
IXYS
Quantity:
195
High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 250μA
≤ V
= 250μA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXTH4N150
- 55 ... +150
- 55 ... +150
1500
Characteristic Values
Min.
2.5
Maximum Ratings
1.13 / 10
1500
1500
±30
±40
350
280
150
300
260
Typ.
12
4
4
5
6
±100 nA
Nm/lb.in.
Max.
100 μA
5.0
6.0
10 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
V
I
R
TO-247
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Package
Fast Intrinsic Diode
Avalanche Rated
Molding Epoxies meet UL 94 V-0
Flammability Classification
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D
=
=
≤ ≤ ≤ ≤ ≤
S
D
Tab = Drain
1500V
4A
6
Ω Ω Ω Ω Ω
= Drain
Tab
DS100287(09/10)

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IXTH4N150 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTH4N150 Maximum Ratings 1500 = 1MΩ 1500 GS ±30 ± 350 ≤ 150° 280 - 55 ... +150 150 - 55 ... +150 300 260 1 ...

Page 2

... D D25 0.5 • I 7.7 DSS D D25 21.7 0.21 Characteristic Values Min. Typ. JM 0.9 15.0 6.7 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH4N150 TO-247 (IXTH) Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min 4.7 A 2.2 0.45 °C 2 1.0 °C ...

Page 3

... D 2.6 2.4 2 1.6 1.4 1.2 1.0 0.8 75 100 125 150 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 3.5 75 100 125 150 IXTH4N150 Fig. 2. Output Characteristics @ Volts DS Fig Normalized to I DS(on) D Drain Current V = 10V 125º 0.5 1 1 Amperes D Fig. 6. Input Admittance T = 125º ...

Page 4

... IXTH4N150 Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 125ºC J 0.4 0.5 0.6 0 Volts SD Fig. 10. Capacitance MHz C iss C oss C rss Volts DS Fig. 12. Forward-Bias Safe Operating Area ...

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