IXTH4N150 IXYS, IXTH4N150 Datasheet - Page 2

• Manufacturer Part Number: IXTH4N150
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTH4N150

• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 4
• Rds(on), Max, Tj=25°c, (?): 6
• Ciss, Typ, (pf): 1576
• Qg, Typ, (nc): 44.5
• Trr, Typ, (ns): 900
• Pd, (w): 280
• Rthjc, Max, (k/w): 0.45
• Package Style: TO-247

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
V
V
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
Test Conditions
F
F
GS
R
DS
GS
G
GS
GS
= 0.5 • I
= I
= 100V, V
= 5Ω (External)
= 20V, I
= 0V, V
= 10V, V
= 10V, V
= 0V
S
ADVANCE TECHNICAL INFORMATION
, V
GS
D25
= 0V, Note 1
DS
D
, -di/dt = 100A/μs
DS
DS
GS
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
2.8
Min.
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
1576
44.5
21.7
Typ.
0.21
105
4.6
7.7
Typ.
35
19
23
42
22
15.0
0.9
6.7
0.45 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
1.3
16
4
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
μs
A
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXTH) Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
IXTH4N150
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
2 - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216