IXGA20N120B3 IXYS, IXGA20N120B3 Datasheet

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IXGA20N120B3

Manufacturer Part Number
IXGA20N120B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet

Specifications of IXGA20N120B3

Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
36
Ic90, Tc=90°c, Igbt, (a)
20
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.10
Tfi, Typ, Tj=25°c, Igbt, (ns)
155
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.63
Rthjc, Max, Igbt, (°c/w)
0.69
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-263
GenX3
High Speed Low Vsat PT
IGBTs 3-20 kHz Switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
F
T
T
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C90
CM
CES
GES
J
JM
stg
C
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
1.6mm (0.062 in.) from Case for 10s
TO-263
TO-220
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive load
T
Mounting Torque (TO-220)
Mounting Force (TO-263)
Maximum Lead Temperature for Soldering
I
I
V
V
I
Test Conditions
Test Conditions
C
C
C
J
J
C
C
C
C
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 90°C
= 25°C, 1ms
= 15V, T
= 25°C
1200V IGBT
= 16A, V
= 250μA, V
= 250μA, V
= V
= 0V, V
CES
,V
J
GE
GE
GE
= 125°C, R
= ±20V
= 15V, Note 2
= 0V
GE
CE
= 0V
= V
GE
GE
G
= 1MΩ
= 15Ω
Preliminary Technical Information
T
T
J
J
= 125°C
= 125°C
IXGA20N120B3
IXGP20N120B3
10..65 / 2.2..14.6
Min.
1200
@V
-55 ... +150
-55 ... +150
Characteristic Values
2.5
Maximum Ratings
CE
I
1.13/10
CM
≤ ≤ ≤ ≤ ≤ 1200
1200
1200
= 40
±20
±30
180
150
300
260
Typ.
2.5
2.7
3.0
2.8
36
20
80
±100
Nm/lb.in.
Max.
5.0
3.1
25
1
N/lb.
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
V
g
g
V
I
V
TO-263 (IXGA)
TO-220 (IXGP)
Features
Advantages
Applications
G = Gate
E = Emitter
C90
Optimized for Low Conduction and
Switching Losses
Square RBSOA
International Standard Packages
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Welding Machines
Inductive Heating
CES
CE(sat)
G
C
G
E
≤ ≤ ≤ ≤ ≤ 3.1V
= 1200V
= 20A
E
C
TAB = Collector
= Collector
C (TAB)
C (TAB)
DS100126(03/09)

Related parts for IXGA20N120B3

IXGA20N120B3 Summary of contents

Page 1

... GE = ±20V 0V, V GES 16A 15V, Note 2 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGA20N120B3 IXGP20N120B3 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ± 15Ω ≤ ≤ ≤ ≤ ≤ 1200 ...

Page 2

... V CE CES . G 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGA20N120B3 IXGP20N120B3 TO-263 (IXGA) Outline Max 1. 0.69 °C/W °C/W TO-220 (IXGP) Outline , ...

Page 3

... V = 15V GE 1.5 13V 11V 1.4 1.3 9V 1.2 1.1 7V 1.0 0.9 0.8 0.7 5V 0.6 3.0 3.5 4.0 4.5 5 25º IXGA20N120B3 IXGP20N120B3 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 80 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V -50 - Degrees Centigrade J Fig. 6. Input Admittance ...

Page 4

... C ies oes res Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGA20N120B3 IXGP20N120B3 Fig. 8. Gate Charge V = 600V 16A NanoCoulombs G Fig ...

Page 5

... Degrees Centigrade J Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 800 700 600 CE 500 T = 125ºC J 400 300 T = 25ºC 200 J 100 Amperes C © 2009 IXYS CORPORATION, All Rights Reserved 3.2 5.5 5.0 2.8 4.5 2 32A 4.0 C 2.0 3.5 1.6 3.0 2.5 1.2 2.0 0 16A 1.5 C 0.4 1.0 0.0 0 800 4.8 4.4 700 4 ...

Page 6

... I = 16A 105 115 125 IXGA20N120B3 IXGP20N120B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 15Ω 15V 600V 125º 25º ...

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