IXGA20N120B3 IXYS, IXGA20N120B3 Datasheet - Page 6

• Manufacturer Part Number: IXGA20N120B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGA20N120B3

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 36
• Ic90, Tc=90°c, Igbt, (a): 20
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.10
• Tfi, Typ, Tj=25°c, Igbt, (ns): 155
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.63
• Rthjc, Max, Igbt, (°c/w): 0.69
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
200
180
160
140
120
100
160
140
120
100
80
60
40
20
80
60
40
20
0
10
25
Switching Times vs. Junction Temperature
I
C
Switching Times vs. Gate Resistance
= 32A
35
t
T
V
t
R
V
r i
20
J
CE
r i
G
CE
= 125ºC, V
= 15Ω , V
= 600V
= 600V
I
45
C
Fig. 20. Inductive Turn-on
Fig. 18. Inductive Turn-on
= 16A
30
55
T
J
GE
GE
t
- Degrees Centigrade
t
d(on)
d(on)
40
= 15V
= 15V
R
65
G
- - - -
- - - -
- Ohms
I
C
50
75
= 32A
85
60
I
95
C
= 16A
70
105
80
115
125
90
90
80
70
60
50
40
30
20
10
0
28
26
24
22
20
18
16
14
12
140
120
100
80
60
40
20
0
10
Switching Times vs. Collector Current
12
t
R
V
r i
CE
G
T
= 15Ω , V
J
= 600V
= 125ºC
14
T
Fig. 19. Inductive Turn-on
J
= 25ºC
16
GE
t
d(on)
18
= 15V
- - - -
20
I
C
- Amperes
22
24
IXGA20N120B3
IXGP20N120B3
26
28
IXYS REF: G_20N120B3(4L)03-17-09
30
32
26
24
22
20
18
16
14
12