IXGA20N120B3 IXYS, IXGA20N120B3 Datasheet - Page 4

• Manufacturer Part Number: IXGA20N120B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGA20N120B3

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 36
• Ic90, Tc=90°c, Igbt, (a): 20
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.10
• Tfi, Typ, Tj=25°c, Igbt, (ns): 155
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.63
• Rthjc, Max, Igbt, (°c/w): 0.69
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
1.00
0.10
0.01
16
14
12
10
10
8
6
4
2
0
0.00001
0
0
f
= 1MHz
5
5
T
J
10
= - 40ºC
Fig. 7. Transconductance
10
Fig. 9. Capacitance
15
0.0001
15
25ºC
I
V
C
125ºC
20
CE
- Amperes
- Volts
20
25
25
Fig. 11. Maximum Transient Thermal Impedance
30
C oes
C res
C ies
0.001
30
35
35
40
Pulse Width - Seconds
45
40
0.01
16
14
12
10
45
40
35
30
25
20
15
10
8
6
4
2
0
5
0
200
0
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
300
T
R
dV / dt < 10V / ns
C
G
CE
5
J
G
= 16A
= 10 mA
= 125ºC
= 15Ω
= 600V
400
10
0.1
500
15
Fig. 8. Gate Charge
Q
600
G
20
- NanoCoulombs
V
700
CE
25
- Volts
800
30
IXGA20N120B3
IXGP20N120B3
1
900 1000 1100 1200 1300
35
40
IXYS REF: G_20N120B3(4L)03-17-09
45
50
10