FDD10N20LZ Fairchild Semiconductor, FDD10N20LZ Datasheet

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FDD10N20LZ

Manufacturer Part Number
FDD10N20LZ
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FDD10N20LZ
Manufacturer:
FAIRCHILD
Quantity:
11 824
©2010 Fairchild Semiconductor Corporation
FDD10N20LZ Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
FDD10N20LZ
N-Channel MOSFET
200V Logic, 7.6A, 0.36
Features
• R
• Low Gate Charge ( Typ.12nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
D
DM
AR
J
L
DSS
GSS
AS
AR
D
JC
JA
, T
Symbol
Symbol
DS(on)
STG
rss
= 0.30( Typ.) @ V
( Typ.11pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
G
= 10V, I
S
D
= 3.8A
T
C
D-PAK
FDD- Series
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
= 25
C unless otherwise noted*
D
o
C)
C
C
= 25
= 100
o
1
C
o
Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe, DMOS
technology.
This advance technology has been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode. These devices are well suited for high efficient switching
mode power supplies and active power factor correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
G
Typ
-
-
FDD10N20LZ
-55 to +150
D
D
S
S
0.45
200
±20
121
300
7.6
4.5
7.6
8.3
30
10
56
December 2010
UniFET
Max
110
2.2
www.fairchildsemi.com
Units
o
Units
C/W
W/
V/ns
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FDD10N20LZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDD10N20LZ Rev. A Description = 3.8A These N-Channel enhancement mode power field effect transistors D are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize ...

Page 2

... DD G 7.6A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse Width  300 s, Duty cycle  2.0% 5. Essentially Independent of Operating Temperature Typical Characteristics FDD10N20LZ Rev. A Package Reel Size D-PAK 380mm unless otherwise noted C Test Conditions I = 250 ...

Page 3

... Note 1MHz ( C iss = shorted C oss = rss = 0 Drain-Source Voltage [V] DS FDD10N20LZ Rev. A Figure 2. Transfer Characteristics *Notes:  1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage V = 10V 20V ...

Page 4

... Operation in This Area 1 is Limited Notes : 0.1 0 Drain-Source Voltage [ 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDD10N20LZ Rev. A (Continued) Figure 8. On-Resistance Variation * Notes : 250uA D 80 120 160 Figure 10. Maximum Drain Current   100 s 1ms 10ms ...

Page 5

... FDD10N20LZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDD10N20LZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • ...

Page 7

... Mechanical Dimensions FDD10N20LZ Rev. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD10N20LZ Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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