STT200 Sirectifier Semiconductors, STT200 Datasheet
STT200
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STT200 Summary of contents
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... Thyristor-Thyristor Modules Type STT200GK08 STT200GK12 STT200GK14 STT200GK16 STT200GK18 Symbol Test Conditions VJM TRMS FRMS =85 C; 180 sine C TAVM FAVM TSM FSM VJM = VJM ...
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... Creeping distance on surface S Strike distance through air d A Maximum allowable acceleration a FEATURES * International standard package * Direct copper bonded Al O -ceramic 2 3 base plate * Planar passivated chips * Isolation voltage 3600 V~ STT200 DRM o =140 = =- = =-40 C =2/3V DRM typ ...
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... I : Crest value, t: duration TSM FSM Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode STT200 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature STT200 2 t versus time (1-10 ms) Fig. 2a Maximum forward current Fig ...
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... K/W Z thJK 0.15 0.10 0. STT200 3 x STT200 3 x STT200 3 x STT200 0. STT200 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or 30° diode for various conduction angles d: ...