STP8A60 SemiWell Semiconductor Co., Ltd., STP8A60 Datasheet - Page 2

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STP8A60

Manufacturer Part Number
STP8A60
Description
Bi-Directional Triode Thyristor
Manufacturer
SemiWell Semiconductor Co., Ltd.
Datasheet
2/5
STP8A60
Electrical Characteristics
Symbol
(dv/dt)c
R
V
V
V
I
I
I
I
V
V
+
DRM
+
th(j-c)
-
-
-
-
I
GT1
GT1
GT3
GT1
GT3
TM
GD
GT1
H
Repetitive Peak Off-State
Current
Peak On-State Voltage
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Gate Trigger Current
Gate Trigger Voltage
Items
V
T
I
V
V
T
T
V
Junction to case
T
J
J
J
D
D
D
D
= 12 A, Inst. Measurement
= 125 °C
= 125 °C, V
= 125 °C, [di/dt]c = -4.0 A/ms,
=2/3 V
= 6 V, R
= 6 V, R
= V
DRM
DRM
, Single Phase, Half Wave
L
L
Conditions
=10 Ω
=10 Ω
D
= 1/2 V
DRM
Min.
0.2
10
Ratings
Typ.
15
Max.
2.0
1.4
1.5
1.5
1.5
2.0
30
30
30
°C/W
Unit
V/㎲
mA
mA
mA
V
V
V

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