BUT11AX NXP Semiconductors, BUT11AX Datasheet

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BUT11AX

Manufacturer Part Number
BUT11AX
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in
converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
PINNING - SOT186A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
November 1995
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
case
CONDITIONS
V
T
CONDITIONS
V
T
CONDITIONS
with heatsink compound
in free air
1 2 3
BE
hs
BE
hs
1
= 0 V
= 0 V
25 ˚C
25 ˚C
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
150
2.5
-65
55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
1000
e
1000
c
BUT11AX
3.95
450
450
150
150
1.5
10
32
10
32
5
5
2
4
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
K/W
K/W
ns
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A

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BUT11AX Summary of contents

Page 1

... Junction to heatsink th j-hs R Junction to ambient th j-a November 1995 CONDITIONS ˚C hs PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BUT11AX TYP. MAX. UNIT - 1000 V - 450 1 150 - ns SYMBOL ...

Page 2

... 500 mA CONDITIONS Con Bon Boff Con Bon - 2 0 Con Bon - 100 ˚ Product specification BUT11AX MIN. TYP. MAX. - 2500 - 10 - MIN. TYP. MAX 1 2 450 - - - - 1 1 ...

Page 3

... VCEOsust . CEOsust V = 300 VCC T.U. Fig. 6. Switching times waveforms with inductive load 0.01. p requirements. Bon 3 Product specification BUT11AX ICon ton toff IBon 30ns -IBoff VCC LC LB T.U.T. Fig. 5. Test circuit inductive load 200 uH ...

Page 4

... BUT11AX 0.01 Fig.10. Forward bias safe operating area. T (1) ( III 1200 NB max BUT11AX 10 100 CE 4 Product specification BUT11AX 0.01 ICM max IC max 100 us ( (2) 500 ms DC III 1000 1 10 100 ...

Page 5

... Philips Semiconductors Silicon Diffused Power Transistor Fig.11. Typical base-emitter and collector-emitter saturation voltages. Fig.12. Collector-emitter saturation voltage. Solid lines = typ values, dotted lines = max values. V November 1995 BEsat C CEsat f(I ); parameter I CEsat B 5 Product specification BUT11AX C Rev 1.100 ...

Page 6

... Philips Semiconductors Silicon Diffused Power Transistor Fig.13. Typical base-emitter saturation voltage. November 1995 V = f(I ); parameter I BEsat B C Fig.14. Transient thermal impedance f(t); parameter j- Product specification BUT11AX Rev 1.100 ...

Page 7

... Fig.15. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1995 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 7 Product specification BUT11AX 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.3 Rev 1.100 1.0 (2x) 0.9 0.7 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 8 Product specification BUT11AX Rev 1.100 ...

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