SDB10S30 Infineon Technologies Corporation, SDB10S30 Datasheet - Page 2

• Manufacturer Part Number: SDB10S30
• Description: Silicon Carbide Schottky Diode
• Manufacturer: Infineon Technologies Corporation

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
SMD version, device on PCB:
@ min. footprint
P-TO263-3-2: @ 6 cm
Electrical Characteristics, at T
Parameter
Static Characteristics
Diode forward voltage
I
I
Reverse current
V
V
Rev. 1.1
F
F
R
R
=10A, T
=10A, T
=300V, T
=300V, T
j
j
=25°C
=150°C
j
j
=25°C
=150°C
2
cooling area
1)
j
= 25 °C, unless otherwise specified
Page 2
Symbol
R
R
Symbol
V
I
R
F
thJC
thJA
min.
min.
-
-
-
-
-
-
-
Values
Values
typ.
typ.
1.5
1.5
15
20
35
-
-
max.
max.
1000
200
2.3
1.7
1.9
SDB10S30
62
2005-02-18
-
Unit
K/W
Unit
V
µA