SDB10S30 Infineon Technologies Corporation, SDB10S30 Datasheet - Page 3

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SDB10S30

Manufacturer Part Number
SDB10S30
Description
Silicon Carbide Schottky Diode
Manufacturer
Infineon Technologies Corporation
Datasheet
Electrical Characteristics, at T
Parameter
AC Characteristics
Total capacitive charge
V
Switching time
V
Total capacitance
V
V
V
Rev. 1.1
R
R
R
R
R
=200V, I
=200V, I
=0V, T
=150V, T
=300V, T
C
=25°C, f =1MHz
F
F
C
C
=10A, d i
=10A, d i
=25°C, f =1MHz
=25°C, f =1MHz
2)
F
F
/d t =-200A/µs, T
/d t =-200A/µs, T
1)
j
j
=150°C
=150°C
j
= 25 °C, unless otherwise specified
Page 3
Symbol
Q
t
C
rr
c
min.
-
-
-
-
-
Values
600
typ.
n.a.
55
40
23
max.
SDB10S30
2005-02-18
-
-
-
-
-
Unit
nC
ns
pF

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