SDB10S30 Infineon Technologies Corporation, SDB10S30 Datasheet - Page 5

• Manufacturer Part Number: SDB10S30
• Description: Silicon Carbide Schottky Diode
• Manufacturer: Infineon Technologies Corporation

5 Typ. reverse current vs. reverse voltage
7 Typ. capacitance vs. reverse voltage
parameter: T
Rev. 1.1
I
C = f (V
R
= f (V
µA
10
10
10
10
pF
10
10
10
450
350
300
250
200
150
100
50
-1
-2
-3
-4
0
2
1
0
50
10
R
R
)
)
0
100
C
= 25 °C, f = 1 MHz
10
150
1
200
10
2
V
150°C
125°C
100°C
25°C
V
V
V
R
R
300
10
Page 5
3
6 Transient thermal impedance
Z
parameter : D = t
8 Typ. C stored energy
E
thJC
C
K/W
=f(V
10
10
10
10
10
10
µJ
2.5
1.5
0.5
= f ( t
-1
-2
-3
-4
1
0
1
0
10
0
R
SDP10S30
)
-7
p
10
)
single pulse
50
-6
10
p
100
/ T
-5
10
-4
150
10
-3
200
SDB10S30
10
2005-02-18
-2
D = 0.50
V
0.20
0.10
0.05
0.02
0.01
t
V
s
p
R
300
10
0