SDB10S30 Infineon Technologies Corporation, SDB10S30 Datasheet - Page 6

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SDB10S30

Manufacturer Part Number
SDB10S30
Description
Silicon Carbide Schottky Diode
Manufacturer
Infineon Technologies Corporation
Datasheet
9 Typ. capacitive charge vs. current slope
parameter: T
Rev. 1.1
Q
c
= f ( d i
nC
22
18
16
14
12
10
8
6
4
2
0
100 200 300 400 500 600 700 800
F
/d t)
j
= 150 °C
I
I
F
F
*2
*0.5
A/µs
di
I
F
F
/dt
1000
Page 6
SDB10S30
2005-02-18

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