SDB10S30 Infineon Technologies Corporation, SDB10S30 Datasheet - Page 4

• Manufacturer Part Number: SDB10S30
• Description: Silicon Carbide Schottky Diode
• Manufacturer: Infineon Technologies Corporation

1 Power dissipation
P
3 Typ. forward characteristic
I
parameter: T j , t
Rev. 1.1
F
tot
= f (V
= f (T
W
A
70
60
55
50
45
40
35
30
25
20
15
10
20
16
14
12
10
5
0
8
6
4
2
0
0.6
0
F
)
C
20
0.8
)
40
1
p
= 350 µs
60
1.2
80
1.4
100 120 140
1.6
1.8
-40°C
25°C
100°C
125°C
150°C
V
°C
T
V
C
F
180
2.2
Page 4
2 Diode forward current
I
parameter: T
4 Typ. forward power dissipation vs.
average forward current
P
F
F(AV) = f ( I
= f (T
W
A
11
32
24
20
16
12
9
8
7
6
5
4
3
2
1
0
8
4
0
0
0
C
)
F
20
)
2
j
T
≤ 175 °C
40
C
4
=100°C, d = t
60
6
80
8
100 120 140
10
p
12
/ T
SDB10S30
2005-02-18
14
d=1
d=0.5
d=0.2
d=0.1
°C
A
T
I
F(AV)
C
180
18