HY27UG162G5A Hynix Semiconductor, HY27UG162G5A Datasheet - Page 17
HY27UG162G5A
Manufacturer Part Number
HY27UG162G5A
Description
2gb Nand Flash
Manufacturer
Hynix Semiconductor
Datasheet
1.HY27UG162G5A.pdf
(42 pages)
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Rev 0.0 / Sep. 2006
NOTE:
1. The 1st block is guaranteed to be a valid block up to 1K cycles with ECC. (1bit/528bytes)
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Symbol
V
T
the device at these or any other conditions above those indicated in the Operating sections of this specification is
Valid Block Number
T
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Vcc
IO
T
BIAS
STG
A
(2)
Parameter
Ambient Operating Temperature (Temperature Range Option 1)
Ambient Operating Temperature (Industrial Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Symbol
N
VB
Table 7: Absolute maximum ratings
Table 6: Valid Blocks Number
Parameter
2008
Min
2Gbit (128Mx16bit) NAND Flash
Typ
HY27UG162G5A Series
2048
Max
-0.6 to 4.6
-0.6 to 4.6
-50 to 125
-65 to 150
-40 to 85
0 to 70
Value
3.3V
Preliminary
Blocks
Unit
Unit
℃
℃
℃
℃
V
V
17
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