MT9HTF12872CHY-667 Micron Semiconductor Products, MT9HTF12872CHY-667 Datasheet
MT9HTF12872CHY-667
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MT9HTF12872CHY-667 Summary of contents
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DDR2 SDRAM SOCDIMM MT9HTF6472CH – 512MB MT9HTF12872CH – 1GB For component data sheets, refer to Micron’s Web site: Features • 200-pin, small-outline clocked dual in-line memory module (SOCDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, or PC2-6400 • 512MB (64 ...
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... Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT9HTF12872CHY-667E1. PDF: 09005aef828eddb4/Source: 09005aef828edcf5 HTF9C64_128x72CH.fm - Rev. B 10/07 EN ...
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Pin Assignments and Descriptions Table 5: Pin Assignments 200-Pin SOCDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ18 101 REF 3 DQ0 53 DQ19 103 105 DQ1 57 ...
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Table 6: Pin Descriptions Symbol Type A0–A13 Input (SSTL_18) BA0–BA2 Input (SSTL_18) CK0, CK0# Input (SSTL_18) CKE0 Input (SSTL_18) DM0–DM8 Input (SSTL_18) ODT0 Input (SSTL_18) RAS#, CAS#, WE# Input (SSTL_18) S0# Input (SSTL_18) SA0–SA1 Input (SSTL_18) SCL Input (SSTL_18) RESET# ...
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Functional Block Diagram Figure 2: Functional Block Diagram S0# DQS0# DQS0 DM0 DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1# DQS1 DM1 DQ8 DQ DQ9 DQ DQ10 DQ DQ11 DQ DQ12 ...
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General Description The MT9HTF6472CH and MT9HTF12872CH DDR2 SDRAM modules are high-speed, CMOS, dynamic random access 512MB and 1GB memory modules, organized in a x72 configuration. These modules use a 512Mb DDR2 SDRAM device with four internal banks or a 1Gb ...
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Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the ...
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I Specifications DD Table 9: DDR2 I Specifications and Conditions – 512MB DD Values are shown for the MT9HTF6472 DDR2 SDRAM only and are computed from the values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition ...
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Table 10: DDR2 I Specifications and Conditions – 1GB DD Values are shown for the MT9HTF12872 DDR2 SDRAM only and are computed from the values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one bank ...
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PLL Specifications Table 11: PLL Device Specifications CUA845 device or JESD82-21 equivalent Parameter Symbol V DC high-level input voltage V DC low-level input voltage Input voltage (limits high-level input voltage low-level input voltage V Input ...
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Temperature Sensor The temperature sensor continuously monitors the module’s temperature and can be read back at any time over the I the “Mobile Platform Memory Module Thermal Sensor Component Specification,” which is found in JEDEC standard JESD21-C. Table 13: Temperature ...
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Serial Presence-Detect Table 15: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage with temperature sensor option Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT SPD input ...
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Module Dimensions Figure 3: 200-Pin DDR2 SOCDIMM 2.0 (0.079) R (2X) 1.0 (0.039) R (2X) U1 1.8 (0.071) (2X) 6.0 (0.236) TYP 2.0 (0.079) TYP U9 3.5 (0.138) TYP Pin 200 1.0 (0.039) TYP Notes: 1. All dimensions are in ...