HN2E04F TOSHIBA Semiconductor CORPORATION, HN2E04F Datasheet
HN2E04F
Related parts for HN2E04F
HN2E04F Summary of contents
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... Symbol Rating Unit 300 100 FSM Symbol Rating Unit P * 300 mW C °C T 125 j −55~125 °C T stg 1 HN2E04F Unit: mm 1.NC 2.Emitter 3.Cathode 4.Anode 5.Collector 6.Base ― JEDEC ― JEITA 2-3N1E TOSHIBA Weight:0.015g (typ.) 2004-06-28 ...
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... R ( ― 1MHz ― 10mA (fig. Equivalent Circuit Test Circuit rr 2 HN2E04F Min Typ. Max Unit −100 ― ― nA −100 ― ― nA 200 ― 700 −0.3 ― ― V ― 100 ― MHz ― ...
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... HN2E04F 2004-06-28 ...
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... −1 µ −8 −10 −0.2 0 (V) CE BASE-EMITTER VOLTAGE −1 −3 COLLECTOR-BASE VOLTAGE V −30 (mA) −30 (mA) 4 HN2E04F I – −25 25 −0.4 −0.6 −0.8 −1.0 ( – MHz Ta = 25°C −10 −30 −100 (V) ...
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... HN2E04F 2004-06-28 ...
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... Q2 6 HN2E04F 2004-06-28 ...
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... Q1, Q2 Common * P – 500 400 300 200 100 100 AMBIENT TEMPERATURE Ta (°C) *Total Rating. 125 150 175 7 HN2E04F 2004-06-28 ...
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... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 8 HN2E04F 030619EAA 2004-06-28 ...