HN2E04F TOSHIBA Semiconductor CORPORATION, HN2E04F Datasheet - Page 4

• Manufacturer Part Number: HN2E04F
• Description: Toshiba Multi Chip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1
−0.05
−0.03
−0.01
5000
3000
1000
−0.5
−0.3
−0.1
500
300
100
−5
−4
−3
−2
−1
−1
−0.1
−0.1
0
0
COLLECTOR EMITTER VOLTAGE V
COMMON EMITTER
Ta = 25°C
COLLECTOR CURRENT I
COLLECTOR CURRENT I
−0.3
−0.3
−2
Ta = 100°C
Ta = 100°C
−1
−1
V
−4
CE (sat)
−25
I
h
25
C
FE
25
−25
– V
– I
−3
−3
CE
– I
C
−6
C
COMMON EMITTER
I C /I B = 10
COMMON EMITTER
V CE = −6 V
−10
−10
C
C
−8
(mA)
(mA)
I B = −1 µA
CE
−10
−9
−8
−7
−6
−5
−4
−3
−2
−30
−30
0
(V)
−10
4
10
−30
−25
−20
−15
−10
5
3
1
−1
−5
0
0
COLLECTOR-BASE VOLTAGE V
COMMON EMITTER
V CE = −6 V
BASE-EMITTER VOLTAGE V
−0.2
−3
Ta = 100°C
−0.4
C
ob
I
C
−10
– V
– V
−0.6
CB
25
BE
−30
−0.8
−25
I E = 0
f = 1 MHz
Ta = 25°C
BE
CB
(V)
(V)
−1.0
HN2E04F
2004-06-28
−100